Description

SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulatedgate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs.