MRAM is basically used as data storage elements. Such data storage can be used for storage of state. Nonvolatile memories can get back stored information even when not powered. The most widely used form of primary storage today is a volatile form of random access memory (RAM), meaning that when the computer is shut down, anything contained in RAM is lost. However, most forms of non-volatile memory have limitations that make them unsuitable for use as primary storage. Hence in Existing they were proposed the design of Magnetic flip-flop and the design is based on Resistive switching mechanism. Spin Transfer Torque MRAM (STT-MRAM) is considered as promising non-volatile memory. Which provides high speed, low power. As per existing design, during power failure or error the system recovers the data from most recent state/point. One of the disadvantages of STT-MRAM for the computing purpose is its relatively high write energy to build up Magnetic Flip-Flop (MFF). Hence in their proposed work concentrated to reduce the power consumption and write energy of MFF. Here, we propose a design of low power magnetic Flip Flop using CMOS technology. CMOS technology provide less noise ration during design. The proposed Flip flop design is based on MT-Swapped MOS technology. A MT-Swapped MOS is a derivative in which two counter terminal exchange current/voltage flows of one MOS terminal to other MOS terminal. Specifically, two ends are agreed to exchange one stream of source (voltage/current) against another stream. These streams are called the legs of the MT-Swap. The MT-Swap defines the time to be complete and the way they are accrued and calculated. magnetic flip-flop (MFF) design libraries has been developed using a unique MRAM process. which is comparable to that of a normal CMOS DFF. Which performs, possible magnetic data store and restore operations. And our proposed design performs in retaining data when electrical power fails or is turned off with low power consumption.