Description

Although near-threshold voltage (NTV) operation is an attractive means of achieving high energy efficiency, it can degrade the circuit stability of static randomaccessmemory (SRAM) cells. This paper proposes an NTV 7T SRAM cell in a 14 nm FinFET technology to eliminate read disturbance by disconnecting the path from the bit-line to the cross-coupled inverter pair using the transmission gate. In the proposed 7T SRAM cell, the halfselect issue is resolved, meaning that no write-back operation is required. A folded-column structure is applied to the proposed 7T SRAMcell to reduce the read access time and energy consumption.