Description

In this paper, a pre-charged local bit-line sharing (PCLBS) static random access memory (SRAM) for nearthreshold operation is proposed. In previous local bit-line sharing SRAMs, such as average-8T and full-swing local bit-line (FSLB) SRAMs, multiple bit-cells share a local bit-line pair with a small capacitance for high read stability. However, the average8T SRAM has a considerably large delay because the full development of the local bit-line cannot be achieved. On the other hand, the FSLB SRAM reduces the delay but requires a timing constraint of control signals to achieve sufficient read sensing margin. The proposed PCLBS SRAM achieves high read speed by fully developing local bit-line pair without a timing constraint. Furthermore, the proposed PCLBS SRAM enhances the read stability and the write ability by, respectively, applying a pre-charged local bit-line scheme and transmission gates in write paths. Based on a 22-nm FinFET technology, the FSLB and proposed PCLBS SRAM have the minimum operating voltages of 0.44 and 0.4 V, respectively, while achieving the 5σ target read stability and write ability yields. Compared with the FSLB SRAM, the proposed PCLBS SRAM consumes 21% less energy at each minimum operating voltage and has 57% smaller read delay at the operating voltage of 0.4 V