Product | Details | Total |
---|---|---|
![]() | 10T SRAM Using Half-VDD Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage Rs3,500.00 We present, in this paper, a new 10T static random access memory cell having single… | Rs3,500.00 |
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SubtotalRs3,500.00
9% CGSTRs315.00
9% SGSTRs315.00
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Rs4,130.00