High-Sensitivity CMOS RF-DC Converter in HF RFID Band

 High-Sensitivity CMOS RF-DC Converter in HF RFID Band

 A fully-integrated RF-DC converter operating at the HF RFID working frequency (13.56 MHz) and realized in 350 nm CMOS technology is presented. It is based on a Dickson’s rectifier, a Pelliconi’s charge pump driven by a 50 kHz ring oscillator, and a voltage monitor. Mathematical model is developed and verified through simulations and measurements. Results show a sensitivity of ?19 dBm with related output voltage of 0.5 V. Moreover, taking advantage from the internal voltage monitor, the suitability of the proposed architecture to pilot RFIDbased sensor boards has been proved.