A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

 A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

 A novel 8-transistor (8T) static random access memory cell with improved data stability in subthreshold operation is designed. The proposed single-ended with dynamic feedback control 8T static RAM (SRAM) cell enhances the static noise margin (SNM) for ultralow power supply. It achieves write SNM of 1.4× and 1.28× as that of isoarea 6T and read-decoupled 8T (RD-8T), respectively, at 300 mV. The standard deviation of write SNM for 8T cell is reduced to 0.4× and 0.56× as that for 6T and RD-8T, respectively. It also possesses another striking feature of high read SNM ?2.33×, 1.23×, and 0.89× as that of 5T, 6T, and RD-8T, respectively. The cell has hold SNM of 1.43×, 1.23×, and 1.05× as that of 5T, 6T, and RD-8T, respectively. The write time is 71% lesser than that of single-ended asymmetrical 8T cell.