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2018 Projects

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Web Alert System

Web Alert System

Web Alert System Mobile phone plays a very important role in people life today;. Using the emai notification to announce the staff for the function is suffering from two main problems which are: First, some of the user do not check his/her calendar periodically, so they may miss read the...
Rs.4,500.00

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10T SRAM Using Half-VDD Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage

10T SRAM Using Half-VDD Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage

10T SRAM Using Half-VDD Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage We present, in this paper, a new 10T static random access memory cell having single ended decoupled read-bitline (RBL) with a 4T read port for low power operation and...
Rs.4,500.00

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28-nm Latch-Type Sense Amplifier Modification for Coupling Suppression

28-nm Latch-Type Sense Amplifier Modification for Coupling Suppression

28-nm Latch-Type Sense Amplifier Modification for Coupling Suppression With the development of modern semiconductor fabrication technology, the channel length of the CMOS device and the device pitch continually shrink accompanied by more and more severe process variation and signal coupling...
Rs.4,500.00

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A 32 kb 0.35–1.2 V, 50 MHz–2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI

A 32 kb 0.35–1.2 V, 50 MHz–2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI

A 32 kb 0.35–1.2 V, 50 MHz–2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS An optimized co-design of SRAM cell, assist schemes, and layout is proposed to achieve wide voltage range operation of SRAM from 0.35–1.2 V at all process corners. A...
Rs.4,500.00

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