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A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

Starting at: Rs.5,500.00

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A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell

A novel 8-transistor (8T) static random access memory cell with improved data stability in subthreshold operation is designed. The proposed single-ended with dynamic feedback control 8T static RAM (SRAM) cell enhances the static noise margin (SNM) for ultralow power supply. It achieves write SNM of 1.4 and 1.28 as that of isoarea 6T and read-decoupled 8T (RD-8T), respectively, at 300 mV. The standard deviation of write SNM for 8T cell is reduced to 0.4 and 0.56 as that for 6T and RD-8T, respectively. It also possesses another striking feature of high read SNM ?2.33, 1.23, and 0.89 as that of 5T, 6T, and RD-8T, respectively. The cell has hold SNM of 1.43, 1.23, and 1.05 as that of 5T, 6T, and RD-8T, respectively. The write time is 71% lesser than that of single-ended asymmetrical 8T cell.



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  • Model: PROJ7006
  • 999 Units in Stock
  • Manufactured by: ClickMyProjects

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This product was added to our catalog on Monday 29 May, 2017.

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